Are you interested in radiation effects in CMOS and would like to contribute to the development of the next generation of detector readout electronics in High Energy Physics? Our Experimental Physics Department is looking for an enthusiastic electronics engineer or applied physicist with knowledge of radiation effects in CMOS and a willingness to understand and model those effects permitting the design of high performance readout chips for future high energy physics experiments.
You will join the Electronic Systems for Experiments Group (ESE) of the Experimental Physics Department (EP), which designs electronic systems for the experiments at CERN and also supplies a series of electronics related services. The Microelectronics section (ME) designs, qualifies and tests radiation tolerant integrated circuits which are used throughout high energy physics experiments. These circuits are used in tracking, calorimetry, muon detectors, trigger generation and high-speed links.
As an Electronics Engineer, you will be actively involved in understanding and modelling radiation effects in the latest CMOS processes, qualifying new processes for radiation tolerance, and using that knowledge to design circuits for future generations of High Energy Physics (HEP) experiments.
In particular, your work will require:
- Develop a deep understanding of the effects of radiation on leading edge CMOS transistors and circuits.
- Develop and verify models which describe the effects of radiation on CMOS transistors.
- Establish protocols for the qualification of circuits for use in the Large Hadron Collider experiments and for experiments at future colliders such as CLIC or the Future Circular Collider.
- Design circuits and circuit building blocks for the experiments.
- Disseminate your knowledge of radiation effects to the large community of ASIC designers involved with readout circuit development for the future experiments.