Research Fellow (2D Materials and Metal Oxides)

27 Nov 2023
End of advertisement period
27 Dec 2023
Contract Type
Fixed Term
Full Time

Job Description

  • Optimize the fabrication technology for transistors based on 2D transition metal dichalcogenides materials and metal oxides (ITO, IGZO)
  • Optimize the monolithic 3D integration technology for BEOL transistors
  • Develop fabrication processes using sputtering, electron-beam deposition, electron beam lithography, photolithography, dry and wet etching
  • Characterize materials and nanodevices using XRD, SEM, TEM, AFM, XPS, Raman spectroscopy, electrical parameter analysers
  • Work with colleagues from materials, data scientists, and process technologists.

The successful candidate will be part of a dynamic research team and will have the opportunity to collaborate with leading experts in the field. We offer a competitive salary package and a stimulating research environment with state-of-the-art facilities.

Interested applicants may send their motivation letter and CV via email to


Candidate should meet at least 4 criteria from the following list:

  • Education: A Ph.D. in Electrical Engineering or a related field from a recognised University/Institute.
  • Experience in clean room nanofabrication and characterisation processes.
  • Experience in fabrication devices based on 2D and metal oxide materials.
  • Excellent written and spoken communication especially in writing and presentation skills.
  • Possess excellent communication and interpersonal skills to work with various stakeholders.
  • Meticulous, able to work well under pressure and commitment to meet tight deadlines.

More Information

Location: Kent Ridge Campus
Organization: College of Design and Engineering
Department: Electrical and Computer Engineering
Employee Referral Eligible: No
Job requisition ID: 22101

Similar jobs

Similar jobs