Research Fellow (Ultralow Power Electronics)

Job Description

We are looking for a Research Fellow with experience in realizing two-dimensional (2D) negative capacitance field-effect transistors based on ferroelectric materials for ultralow power electronics applications. 

The candidate is expected to: 

• Develop device designs, fabrication, and extensive characterization of advanced transistors integrated with two-dimensional transition metal dichalcogenides (2D-TMD) and ferroelectric materials. 
• Report experimental results to the Principal Investigator 
• Publish papers in reputable journals/conferences
• Assist in preparing progress reports and research proposals

Qualifications

• Possess a recognized PhD degree in Electrical/ Electronic, Physics or Materials Engineering  
• He/she should ideally have a proven track record of publications in leading journals. 
• Strong written and oral communication and presentation skills. 
• Relevant experience in the field of CMOS nano-electronic devices and nano-fabrication technology would be an added advantage. 
• Possess excellent communication and interpersonal skills to work with various stakeholders. 
• Meticulous, able to work well under pressure and commitment to meet tight deadlines 
• Open to fixed-term contract

More Information

Location: Kent Ridge Campus
Organization: College of Design and Engineering
Department: Electrical and Computer Engineering
Employee Referral Eligible: No
Job requisition ID: 22093