Research Fellow (Ultralow Power Electronics)
We are looking for a Research Fellow with experience in realizing two-dimensional (2D) negative capacitance field-effect transistors based on ferroelectric materials for ultralow power electronics applications.
The candidate is expected to:
- Develop device designs, fabrication, and extensive characterization of advanced transistors integrated with two-dimensional transition metal dichalcogenides (2D-TMD) and ferroelectric materials.
- Report experimental results to the Principal Investigator
- Publish papers in reputable journals/conferences
- Assist in preparing progress reports and research proposals
- Possess a recognized PhD degree in Electrical/ Electronic, Physics or Materials Engineering
- He/she should ideally have a proven track record of publications in leading journals.
- Strong written and oral communication and presentation skills.
- Relevant experience in the field of CMOS nano-electronic devices and nano-fabrication technology would be an added advantage.
- Possess excellent communication and interpersonal skills to work with various stakeholders.
- Meticulous, able to work well under pressure and commitment to meet tight deadlines
- Open to fixed-term contract
Location: Kent Ridge Campus
Organization: College of Design and Engineering
Department: Electrical and Computer Engineering
Employee Referral Eligible: No
Job requisition ID: 22093