Postdoc 2D pFET device

2D pFET lab device flow establishment, characterization and development to satisfy device specs required in Exploratory logic program.

Explore pathways towards development of viable 2D-channel pFET devices, to unlock 2D-materials technology s potential. 

2D materials have been proposed for more than one decade to replace the Silicon channel in future CMOS technologies, and extend Moore s law validity, thanks to their large electron and hole mobilities, achievable at an atomic-scale thin channel, which also provides superior electrostatic control. Their adoption by a mainstream technology, or emergence as an alternative technology to CMOS, remains however an enormously challenging task, where technological advance situates at the confluence of fundamental material understanding, innovative device engineering and process control, pragmatic tackling of reliability concerns and design requirements.   

Despite recent advances in prototyping nFET devices, there is an acute gap in pFET pathfinding. Device research avenues need to be explored, to control and properly access the 2D channel, by identifying potential solutions to form, encapsulate and connect the 2D material with its surrounding environment. This calls for the development of device prototypes, paying attention to critical areas such as 2D channel formation and contact strategies, 2D channel encapsulation and doping, and gate stack development. Assessment of the electrical performance and key reliability monitors will allow rapid feedback towards conversion of device engineering innovations into technologically viable routes.