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PhD Studentship, Memristor-Assisted Analogue Circuit Design

Employer
UNIVERSITY OF SOUTHAMPTON
Location
Southampton, United Kingdom
Salary
£15,609 tax-free per annum for up to 3.5 years
Closing date
31 Aug 2021

Centre for Electronics Frontiers

Location:  Highfield Campus
Closing Date:  Tuesday 31 August 2021
Reference:  1374321PN

Supervisory Team:    Dr Shiwei Wang, Prof Themis Prodromakis

Project description

Analogue circuits are the interface between the physical world and our powerful digital systems. Precise, resilient, low-power, and miniaturized analogue hardware is imperative for future electronics which aim to connect and interact with everything in the physical world. This requires fundamental breakthroughs in analogue circuit design. 

This PhD project aims to explore a new paradigm of analogue circuit design enabled by the memristor-CMOS integrated technology. High-precision and resilient analogue circuits typically require high power consumption and large area occupation. Thanks to the desirable features such as non-volatile resistive switching, scalability for large arrays, and computational power efficiency, memristors bring new possibilities when integrated with CMOS analogue circuitry. The candidate will develop new circuit ideas, design and validate the prototype integrated circuits (IC), and build systems to demonstrate the application in solving real-world problems. 

The project will be conducted at the Centre for Electronics Frontiers (CEF) at the University of Southampton. CEF is a dynamic interdisciplinary Centre that delivers novel solutions for advanced sensory systems, energy technologies and unconventional computing architectures. Our team encompasses diverse expertise ranging from materials process development to electronic devices, circuits, and systems. This knowledge combined with our state-of-art facilities and strong collaborations with industry enables us to offer unique solutions to real-world problems.

At CEF, the candidate will have access to the cutting-edge memristor technologies developed in-house in addition to the full CMOS IC design platforms and will thus be in a unique position to explore and validate the new design concepts. The PhD student will learn industry standard IC design methodologies and will have the opportunity to join a multi-disciplinary research team and to be trained and work in the world-class facilities of the Zepler Institute for Photonics and Nanoelectronics. The candidate for this project will also have opportunities for placement and internships with our collaborators from industry and other leading research institutions. 

If you wish to discuss any details of the project informally, please contact Dr Shiwei Wang, Centre for Electronics Frontiers, Email: shiwei.wang@soton.ac.uk

Entry Requirements

A very good undergraduate degree (at least a UK 2:1 honours degree, or its international equivalent) or an MEng/MSc (or equivalent, or near completion) with first class honours or distinction in Electronic Engineering. We welcome applications from candidates with a strong background in analogue & mixed-signal circuit design. Prior design experiences with precision amplifiers and data converters are highly desired. Industrial IC design or successful tape-out experiences will be a strong plus.

Closing date: applications should be received no later than 31 August 2021 for standard admissions, but later applications may be considered depending on the funds remaining in place.

Funding: For UK students, Tuition Fees and a stipend of £15,609 tax-free per annum for up to 3.5 years. 

How To Apply

Applications should be made online. Select programme type (Research), 2021/22, Faculty of Physical Sciences and Engineering, next page select “PhD  Nanoelectronics (Full time) 

Applications should include

  • Research Proposal
  • Curriculum Vitae
  • Two reference letters
  • Degree Transcripts to date

Apply online: https://www.southampton.ac.uk/courses/how-to-apply/postgraduate-applications.page

For further information please contact: feps-pgr-apply@soton.ac.uk

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