PhD Studentship, 2D Materials for Resistive RAM Applications
Centre for Electronics Frontiers
Location: Highfield Campus
Closing Date: Tuesday 31 August 2021
Supervisory Team: Dr Spyros Stathopoulos, Dr Dimitra Georgiadou, Prof Themis Prodromakis
This PhD studentship aims at developing the next generation of resistive random-access memories (RRAM) based on 2D materials fabricated with flexible substrates. Flexible devices incorporating mono- or multilayers of materials, such as graphene, graphene oxide, MoS2 or hBN can offer a competitive advantage for realising RRAM devices with nanosecond switching and low power consumption and also alleviate existing issues related to increased line resistance that are detrimental to the performance of state-of-the-art devices. Additionally, given their unique ion transport characteristics, they can provide new avenues for modulating and optimising the switching behaviour of existing RRAM topologies that have been developed in CEF.
We welcome applications from candidates with a background in electronics, physics and material science. Specific areas of interest would include nanofabrication, nanoelectronics devices, thin films and semiconductors.
The PhD student will have the opportunity to join a multi-disciplinary team and to be trained and work in the world-class facilities of the Zepler Institute for Photonics and Nanoelectronics. The Centre for Electronics Frontiers will provide research experience in one of its programs, training, laboratory facilities and access to its seminars and lectures. Students would also be encouraged to attend major conferences during their period of study and would have access to all university facilities for wider study, including the libraries, and recreation spaces.
If you wish to discuss any details of the project informally, please contact Dr Spyros Stathopoulos or Dr Dimitra Georgiadou, Centre for Electronics Frontiers, Email: firstname.lastname@example.org, email@example.com.
A very good undergraduate degree (at least a UK 2:1 honours degree, or its international equivalent) or an MEng/MSc (or equivalent, or near completion) with first class honours or distinction in Electronics, Physics or Material Science or a closely related subject, such as Chemistry or Engineering.
Closing date: applications should be received no later than 31 August 2021 for standard admissions, but later applications may be considered depending on the funds remaining in place.
Funding: For UK students, Tuition Fees and a stipend of £15,609 tax-free per annum for up to 3.5 years.
How To Apply
Applications should be made online. Select programme type (Research), 2021/22, Faculty of Physical Sciences and Engineering, next page select “PhD Nanoelectronics (Full time)”.
Applications should include:
- Research Proposal
- Curriculum Vitae
- Two reference letters
- Degree Transcripts to date
For further information please contact: firstname.lastname@example.org